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| inchange semiconductor product specification silicon npn power transistors BUW13W buw13aw description ? with to-247 package ? high voltage,high speed applications ? converters ? inverters ? switching regulators ? motor control systems pinning (see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit BUW13W 850 v cbo collector-base voltage buw13aw open emitter 1000 v BUW13W 400 v ceo collector-emitter voltage buw13aw open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 15 a i cm collector current-peak 30 a i b base current 6 a i bm base current-peak 9 a p t total power dissipation t c =25 ?? 175 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-mb thermal resistance from junction to mounting base 0.7 k/w fig.1 simplified outline (to-247) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUW13W buw13aw characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BUW13W 400 v ceo(sus) collector-emitter sustaining voltage buw13aw i c =0.1a ; i b =0; l=25mh 450 v BUW13W i c =10a; i b =2a v cesat collector-emitter saturation voltage buw13aw i c =8a; i b =1.6a 1.5 v BUW13W i c =10a; i b =2a v besat base-emitter saturation voltage buw13aw i c =8a; i b =1.6a 1.6 v i ces collector cut-off current v ce =rated v ces ; v be =0 t j =125 ?? 1.0 4.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe-1 dc current gain i c =20ma ; v ce =5v 10 35 h fe-2 dc current gain i c =1.5a ; v ce =5v 10 35 switching times resistive load t on turn-on time 1.0 | s t s storage time 4.0 | s t f fall time for BUW13W i c =10a ;i b1 =-i b2 =-2a for buw13aw i c =8a ;i b1 =-i b2 =-1.6a 0.8 | s inchange semiconductor product specification 3 silicon npn power transistors BUW13W buw13aw package outline fig.2 outline dimensions |
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